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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Qorvo UJ3D06504TS is a high-performance Silicon Carbide (SiC) Schottky diode designed for demanding applications. It features a maximum reverse voltage of 650V and an average rectified current of 4A, with a typical forward voltage of 1.7V at 4A.
This diode utilizes SiC technology, offering advantages such as high breakdown voltage and low leakage current. The reverse leakage is rated at 25 µA at 650V, and junction capacitance is 118pF at 1V and 1MHz. It operates within a junction temperature range of -55°C to 175°C.
The UJ3D06504TS has a speed characteristic of 'No Recovery Time' for currents over 500mA (Io) and a reverse recovery time of 0 ns, making it suitable for high-frequency switching applications. It is supplied in a TO-220-2 package and is designed for through-hole mounting.
This component is RoHS3 compliant and has an MSL rating of 1 Unlimited. Its robust construction and advanced SiC technology make it a reliable choice for power electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.16 | $2.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage is 650V.
The average rectified current is 4A.
The maximum forward voltage at 4A is 1.7V.
The operating junction temperature range is -55°C to 175°C.
It uses SiC (Silicon Carbide) Schottky technology.
The package is TO-220-2.