| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | 20+ (2021) | On Request | On Request |
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The UnitedSiC UF3C065040K4S is a 650V, 54A N-Channel Silicon Carbide (SiC) Cascode MOSFET. This device co-packages a high-performance F3 SiC fast JFET with a cascode-optimized MOSFET, offering a standard gate drive SiC solution.
Key electrical characteristics include a typical on-resistance of 42mW (52mOhm maximum at 40A, 12V), a gate threshold voltage of 6V (maximum at 10mA), and a maximum continuous drain current of 54A at 25°C case temperature. It boasts excellent reverse recovery characteristics with a charge (Qrr) of 138nC and a time (trr) of 38ns at 25°C.
Designed for demanding applications, this MOSFET operates at temperatures up to 175°C. Its TO-247-4L package is optimized for faster switching and cleaner gate waveforms, making it suitable for applications requiring standard gate drive and efficient switching.
Typical applications include EV charging, PV inverters, switch-mode power supplies, power factor correction modules, motor drives, and induction heating. The device is ESD protected, HBM class 2.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
TO-247-4.
-55°C to 175°C.
54A.
52mOhm at 40A, 12V.
43nC at 12V.
1500pF at 100V.