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UF3C065040B3 The On Semiconductor UF3C065040B3 is a 650V SiC MOSFET designed for high-performance applications. It features a 41A continuous drain current and 52mOhm Rds(on).
Mfr Part #:

UF3C065040B3

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor UF3C065040B3 is a 650V SiC MOSFET designed for high-performance applications. It features a 41A continuous drain current and 52mOhm Rds(on).
✓ Total Stock: 3,200 pcs
$ Price Range: $2.81

UF3C065040B3 Available from 1 distributor

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✓ Non-Authorised
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Flip Electronics ✓
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3,200 pcs
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UF3C065040B3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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UF3C065040B3 Description

Short technical summary and product information.

The On Semiconductor UF3C065040B3 is a Silicon Carbide (SiC) MOSFET belonging to the UF3C series. This single N-channel transistor offers a breakdown voltage of 650V and a continuous drain current of 41A. Its low drain-source on-resistance is rated at 52mOhms, contributing to efficient power handling.

 

The UF3C065040B3 is designed for surface mounting and comes in a D2PAK-3 package. It operates within a temperature range of -55°C to +175°C and has a power dissipation capability of 176W. The gate-source breakdown voltage is 25V.

 

This MOSFET is suitable for various power electronics applications where high efficiency and performance are critical. Its SiC technology enables superior characteristics compared to traditional silicon-based MOSFETs.

UF3C065040B3 Quick Information

Product Type: MOSFET
Series: UF3C
Canonical Name: UnitedSiC UF3C065040B3 SiC MOSFET
Subcategory: Transistors

UF3C065040B3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

UF3C065040B3 Estimated Pricing

Qty Low High
1+ $2.81 $2.81

Estimated market price range - modelled values for guidance only, not live distributor offers.

UF3C065040B3 Features

  • 650V drain-source breakdown voltage.
  • 41A continuous drain current.
  • 52mOhm drain-source on-resistance.
  • SiC technology for high performance.
  • D2PAK-3 surface mount package.

UF3C065040B3 Applications

  • Ideal for power supply circuits.
  • Suitable for motor drive applications.
  • Used in renewable energy systems.
  • Applicable in industrial power control.

UF3C065040B3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the UF3C065040B3?

650 V.

What is the continuous drain current rating?

41 A.

What is the drain-source on-resistance?

52 mΩ.

What is the operating junction temperature range?

-55 °C to +175 °C.

What package is the UF3C065040B3 available in?

D2PAK-3 surface-mount package.

What is the gate-source voltage rating?

25 V.

What is the total power dissipation of this MOSFET?

176 W.

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