| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
500 pcs
|
500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Tape & Reel | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Qorvo UF3C065030T3S is an N-Channel MOSFET designed for various power applications. It features a high drain-to-source voltage (Vdss) of 650V and a continuous drain current (Id) of 85A at 25°C. The MOSFET offers a low on-resistance (Rds On) of 35mOhm at 50A and 12V gate drive voltage.
With a maximum power dissipation of 441W (Tc), this component is suitable for demanding thermal environments. It operates within a temperature range of -55°C to 175°C (TJ). The gate charge (Qg) is a maximum of 51nC at 15V, and the input capacitance (Ciss) is 1500pF at 100V.
The UF3C065030T3S is packaged in a standard TO-220-3 configuration, designed for through-hole mounting. This packaging ensures reliable performance and ease of integration into circuit designs. The RoHS status is reported as RoHS3 Compliant, and the Moisture Sensitivity Level (MSL) is 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.16 | $2.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the UF3C065030T3S is 650V.
The continuous drain current (Id) at 25°C for the UF3C065030T3S is 85A.
The maximum on-resistance (Rds On) for the UF3C065030T3S is 35mOhm at 50A and 12V.
The operating temperature range for the UF3C065030T3S is -55°C to 175°C (TJ).
The UF3C065030T3S is supplied in a TO-220-3 package.
The UF3C065030T3S is designed for through-hole mounting.