| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,500 pcs
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2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The UF2840G from MACOM Technology Solutions is a high-performance RF Power MOSFET transistor featuring an N-channel enhancement mode DMOS structure. This device is engineered for broadband applications, delivering 40W of saturated output power over a frequency range of 100MHz to 500MHz with a typical operating voltage of 28V.
Key electrical characteristics include a minimum drain-source breakdown voltage of 65V, a gate threshold voltage between 2.0V and 6.0V, and a forward transconductance of 0.5S. It exhibits lower capacitances for broadband operation and a lower noise figure compared to competitive devices. The transistor is rated for a maximum power dissipation of 116W at 25°C and has a junction temperature rating of 200°C.
Designed for demanding RF applications, the UF2840G offers a typical power gain of 10dB and a drain efficiency of 50% at 500MHz. It also demonstrates a load mismatch tolerance of 30:1 VSWR. The device operates within a storage temperature range of -55°C to 150°C and has a low thermal resistance of 1.52°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The UF2840G provides 40W of power.
The UF2840G operates from 100MHz to 500MHz.
The typical operating voltage for the UF2840G is 28V.
The drain-source breakdown voltage is a minimum of 65V.
The gate threshold voltage is between 2.0V and 6.0V.
The power gain is a minimum of 10dB at 500 MHz.
The drain efficiency is a minimum of 50% at 500 MHz.