| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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38 pcs
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38 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The MACOM Technology Solutions UF2820P is an N-channel enhancement mode RF Power MOSFET Transistor designed for broadband operation. This device features a DMOS structure and common source configuration, offering lower capacitances for enhanced performance.
Key electrical specifications include a 28V operating voltage, 20W power output, and a frequency range of 100-500MHz. It provides a typical power gain of 10dB and a minimum drain efficiency of 50% at 500MHz. The transistor handles a drain-source current of 2.8A and has a maximum power dissipation of 53W.
Absolute maximum ratings include a drain-source voltage of 65V and a gate-source voltage of 20V. The junction temperature can reach up to 200°C, with a storage temperature range of -55°C to 150°C. The thermal resistance is rated at 3.3°C/W.
This RF Power MOSFET is suitable for applications requiring high-frequency power amplification within its specified operating parameters.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The UF2820P operates at a nominal voltage of 28V.
The UF2820P has a power output of 20W.
The UF2820P is designed for a frequency range of 100MHz to 500MHz.
The typical power gain for the UF2820P is 10dB.
The UF2820P utilizes MOSFET technology.
The UF2820P is an N-Channel configuration.