| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,600 pcs
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3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The UF28100V from MACOM Technology Solutions is an N-channel enhancement mode RF Power MOSFET Transistor. It features a DMOS structure, lower capacitances for broadband operation, and high saturated output power.
This transistor operates at 28V and is rated for 100W output power across a frequency range of 100-500 MHz. Key electrical characteristics include a Drain-Source Breakdown Voltage of 65V, a Gate Threshold Voltage between 2.0V and 6.0V, and a minimum Power Gain of 10 dB at 500 MHz. It also offers a minimum Drain Efficiency of 50% and a Return Loss of 10 dB at 500 MHz.
The UF28100V has a maximum Power Dissipation of 250W and a Junction Temperature rating of 200°C. Its absolute maximum ratings include a Drain-Source Voltage of 65V and a Gate-Source Voltage of 20V. The device has a low thermal resistance of 0.7 °C/W.
This RF Power MOSFET is suitable for applications requiring high output power and broadband performance. Its specifications make it a component for various RF power amplifier designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage (VDS) is 65 V.
The Gate Threshold Voltage (VGS(TH)) ranges from 2.0 V to 6.0 V.
The maximum Power Dissipation (PD) is 250 W.
The transistor operates in the frequency range of 100-500 MHz.
The UF28100V provides 100W of output power at 28V.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.