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3,250 pcs
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3250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Texas Instruments UCC5390ECDR is a high-performance, single-channel isolated gate driver. It is designed to drive IGBT, MOSFET, and SiCFET power switches with a peak output current of 17A. The device provides basic and reinforced isolation with a withstand voltage of 3000Vrms and a working isolation voltage of 990Vrms.
Key electrical specifications include an input supply voltage range of 3V to 15V and a driver supply voltage range of 13.2V to 33V. It features a propagation delay of 65ns and a fall time of 10ns, ensuring efficient switching. The UCC5390ECDR also includes an active miller clamp and emitter-referenced UVLO for enhanced protection and reliability.
This gate driver is housed in an 8-SOIC package, suitable for surface mount applications. Its operating temperature range is -40°C to 125°C, making it suitable for demanding environments. The device is certified by CQC, CSA, UR, and VDE, indicating compliance with various safety standards.
With its combination of isolation, high current drive, and fast switching characteristics, the UCC5390ECDR is well-suited for various power conversion applications.
| Qty | Low | High |
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| 1+ | $1.21 | $1.21 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The UCC5390ECDR offers basic and reinforced isolation with a withstand isolation voltage of 3000Vrms and a working isolation voltage of 990Vrms.
The UCC5390ECDR is designed to drive IGBT, MOSFET, and SiCFET power switches.
The UCC5390ECDR has a typical peak output current of 17A for both source and sink.
The operating temperature range for the UCC5390ECDR is -40°C to 125°C.
The UCC5390ECDR is available in an 8-SOIC package.