| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,480 pcs
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3480 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Channel Type | |
| Current | |
| Driven Configuration | |
| Gate Type | |
| High Side Voltage | |
| Logic Voltage | |
| Mounting Type | |
| Number of Drivers | |
| Operating Temperature | |
| Operating Voltage | |
| Rise | |
| Supplier Device Package | |
| Voltage |
The Texas Instruments UCC27712QDRQ1 is an automotive-qualified half-bridge gate driver designed for high-voltage applications. It operates fully up to 620V on the high-side (HB) pin, with an absolute maximum rating of 700V.
This device features independent high-side and low-side drivers with dual inputs and an output interlock function, providing 150ns of deadtime. It delivers a peak output current of 1.8A source and 2.8A sink. The driver supports IGBT and N-channel/P-channel MOSFET gate types and is compatible with TTL and CMOS logic levels.
Key electrical specifications include a recommended VDD range of 10V to 20V and typical rise times of 16ns and 10ns. It offers robust performance with dv/dt immunity of 50 V/ns and negative voltage tolerance on inputs. The operating temperature range is -40°C to 125°C (TJ).
The UCC27712QDRQ1 is housed in an industry-standard 8-pin SOIC package, suitable for surface mount applications. It is AEC-Q100 qualified for automotive use.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.89 | $0.89 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The recommended VDD operating voltage range is 10V to 20V.
The peak sink current is 2.8A and the peak source current is 1.8A.
The high-side voltage rating is 600V.
It is available in an 8-SOIC surface-mount package.
The junction temperature operating range is -40°C to 125°C.
It can drive IGBTs, N-channel MOSFETs, and P-channel MOSFETs.
The driven configuration is half-bridge with independent channels.