| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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54,788 pcs
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54788 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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7,075 pcs
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7075 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
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1,259 pcs
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1259 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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447 pcs
|
447 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The Texas Instruments UCC27712DR is a high-performance half-bridge gate driver IC. It is designed to drive IGBT and N-channel/P-channel MOSFET power switches efficiently.
This device operates with an input supply voltage range of 10V to 20V and can handle high-side voltages up to 620V. It provides a peak output current of 2.8A sink and 1.8A source. Key features include integrated dead-time control and an interlock function to prevent shoot-through.
The UCC27712DR operates over a wide temperature range of -40°C to 150°C. It is available in an 8-SOIC package, suitable for surface mount applications. The driver configuration is dual and non-inverting, with TTL and CMOS compatible inputs.
This gate driver is well-suited for various power conversion applications requiring robust control of half-bridge power stages. Its specifications ensure reliable operation in demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.74 | $0.74 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The input supply voltage is 10 V to 20 V, with a high side voltage rating of 600 V.
8-SOIC surface mount package (0.154", 3.90mm width).
-40°C to 150°C.
Peak output current is 2.8 A sink and 1.8 A source.
Yes, it includes dead time control and interlock.
It can drive IGBTs, N-channel MOSFETs, and P-channel MOSFETs.
Typical propagation delay is 0.1 µs.