| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,235 pcs
|
3235 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Driven Configuration | |
| Gate Type | |
| High Side Voltage | |
| Logic Voltage | |
| Mounting Type | |
| Number of Drivers | |
| Operating Temperature | |
| Propagation Delay | |
| Quiescent Current | |
| Rise | |
| Supplier Device Package | |
| Voltage |
The Texas Instruments UCC27710DR is an active half-bridge gate driver IC capable of handling high-side and low-side configurations for IGBT and MOSFET power switches. It operates with an input supply voltage range of 10V to 20V and features a high-side voltage rating of up to 620V, with an absolute maximum on the HB pin of 700V.
Key electrical specifications include a peak output current of 0.5A source and 1.0A sink, a propagation delay of 140ns typical, and delay matching of 8ns typical. The device incorporates features such as dead-time control and output interlock, with a configurable deadtime of 150ns. It offers dv/dt immunity of 50 V/ns and negative voltage tolerance on inputs down to -5V.
The UCC27710DR is housed in an industry-standard 8-SOIC package with surface mount mounting type. It operates over a wide temperature range of -40°C to 150°C. The driver configuration is dual and non-inverting, compatible with both TTL and CMOS logic levels. Undervoltage lockout is typically set at 10V, ensuring reliable operation within the specified input voltage range.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.58 | $0.58 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
700 V.
-40°C to 150°C (junction).
8-SOIC (0.154", 3.90mm Width) surface-mount package.
0.5 A source and 1.0 A sink.
140 ns typical.
IGBTs and N-channel and P-channel MOSFETs.
10 V to 20 V.