| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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7,030 pcs
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7030 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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The Texas Instruments UCC27516DRSR is a high-speed, single-channel, low-side gate driver. It is designed to drive GaNFET, IGBT, and N-Channel MOSFET power switches efficiently. This device features a peak output current of 4A, supporting both source and sink operations.
The UCC27516DRSR operates from a single supply voltage ranging from 4.5V to 18V. It provides fast switching characteristics with a typical propagation delay of 13ns, a rise time of 7ns, and a fall time of 7ns. The input logic thresholds are compatible with both TTL and CMOS levels, offering flexibility in design. The driver configuration can be inverting or non-inverting, and an unused input pin can be utilized for enable/disable functions.
Packaged in a compact 6-SON (3x3mm) WDFN exposed pad, the UCC27516DRSR is suitable for surface mount applications. It operates within a wide temperature range of -40°C to 140°C (TJ). The device includes undervoltage lockout (UVLO) and ensures outputs are held low during power-up and power-down, preventing glitches. Its hysteretic logic thresholds provide high noise immunity.
This gate driver is a cost-effective alternative to discrete NPN and PNP solutions, offering superior performance for power management applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.28 | $0.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
4.5V to 18V.
-40°C to 140°C (junction temperature).
6-SON (3x3) and 6-WDFN with exposed pad, both surface mount.
4A.
IGBT and N-Channel MOSFET.
13ns typical.
Yes, both inverting and non-inverting input types are supported.