| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9,075 pcs
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9075 pcs | On Request | 1 | On Request | On Request | 1736+ | On Request | On Request | |
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5,027 pcs
|
5027 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Texas Instruments UCC27512DRSR is a high-speed, single-channel, low-side gate driver. It is designed to efficiently drive GaNFET, IGBT, and N-Channel MOSFET power switches.
This device operates over a wide input supply voltage range of 4.5V to 18V. It offers a peak output current capability of 4A source and 8A sink, providing robust performance for demanding applications. The UCC27512DRSR features fast switching characteristics, with a typical rise time of 9ns and a fall time of 7ns, and a propagation delay of 13ns.
It supports both inverting and non-inverting input logic, compatible with CMOS and TTL thresholds. The driver includes a 5V undervoltage lockout (UVLO) to ensure safe operation during power up and down. The package is a 6-SON (3x3) with a surface mount type.
Key features include hysteretic logic for high noise immunity and split outputs for independent adjustment of turn-on and turn-off speeds. This makes it a versatile solution for various power management applications requiring efficient gate drive.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.32 | $0.32 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The UCC27512DRSR has a peak output current of 4A source and 8A sink.
The operating voltage range for the UCC27512DRSR is 4.5V to 18V.
The typical rise time is 9ns and the typical fall time is 7ns.
The operating temperature range is -40°C to 140°C (TJ).
The UCC27512DRSR is available in a 6-SON (3x3) package and a 6-WDFN Exposed Pad package.
This gate driver is designed for GaNFET, IGBT, and N-Channel MOSFET power switches.