| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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9,000 pcs
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9000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
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4,306 pcs
|
4306 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
3,480 pcs
|
3480 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| AEC Qualified | |
| Automotive Grade | |
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The Texas Instruments UCC27511AQDBVRQ1 is a single-channel, low-side gate driver designed for driving GaNFET, IGBT, and N-Channel MOSFET power switches. It features a wide input supply voltage range of 4.5V to 18V and offers a high peak output current of 8A sink and 4A source.
This driver boasts fast switching characteristics with a typical rise time of 8ns and a fall time of 7ns, along with a propagation delay of 13ns. The input logic thresholds are compatible with both TTL and CMOS levels, and the device includes an undervoltage lockout (UVLO) feature that holds outputs low during power-up and power-down to ensure glitch-free operation.
The UCC27511AQDBVRQ1 is housed in a compact SOT-23-6 package, suitable for surface mount applications. Its split output configuration allows for independent adjustment of turn-on and turn-off speeds, enhancing design flexibility. This device is qualified for automotive applications and AEC-Q100 qualified.
Key electrical specifications include a 4.5V to 18V operating voltage, 8A peak sink current, and 4A peak source current. The device supports inverting and non-inverting input logic and is designed for low-side driving of power transistors.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.42 | $0.42 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The input supply voltage ranges from 4.5V to 18V.
The device is available in an SOT-23-6 surface-mount package.
The operating junction temperature range is -40°C to 150°C.
The peak output current is 8A sink and 4A source.
It is designed to drive IGBTs and N-Channel MOSFETs.
It has one channel (single).
Typical rise time is 8ns and fall time is 7ns.