| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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36,160 pcs
|
36160 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
450 pcs
|
450 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Texas Instruments UCC27511ADBVT is a high-speed, single-channel, low-side gate driver designed for driving N-channel MOSFETs and IGBTs. It provides a peak sink current of 8A and a peak source current of 4A, ensuring robust performance in demanding applications.
This device operates from a wide input supply voltage range of 4.5V to 18V, offering flexibility in power design. It features split outputs for independent adjustment of turn-on and turn-off speeds, along with fast propagation delays of 13ns typical and fast rise/fall times of 8ns and 7ns respectively. The UCC27511ADBVT includes undervoltage lockout (UVLO) at 4V typical, ensuring glitch-free operation during power up and down. Its input logic thresholds are compatible with both TTL and CMOS levels and feature wide hysteresis for high noise immunity.
The UCC27511ADBVT is housed in a compact SOT-23-6 package, suitable for surface mounting. Its operating temperature range is -40°C to 140°C (TJ), making it suitable for various environmental conditions. This gate driver is a cost-effective replacement for discrete NPN and PNP solutions, offering enhanced immunity against Miller turn-on.
Key electrical characteristics include a single channel, low-side driven configuration, and support for IGBT and N-Channel MOSFET power switches. The input type can be inverting or non-inverting, with unused input pins available for enable/disable functions. The device maintains outputs low during VDD UVLO conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.50 | $0.50 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
4.5V to 18V.
SOT-23-6 surface mount package.
-40°C to 140°C junction temperature.
8A maximum, 4A minimum.
13ns typical.
IGBTs and N-Channel MOSFETs.
Inverting and non-inverting.