| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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14,002 pcs
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14002 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
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8,742 pcs
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8742 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
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1,096 pcs
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1096 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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34 pcs
|
34 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Texas Instruments UCC27424DR is a high-speed, dual MOSFET driver designed for efficient power switching applications. It delivers ±4A of peak output current, crucial for driving capacitive loads like MOSFETs and IGBTs. This device operates over a wide supply voltage range of 4V to 15V and features independent channels with non-inverting input logic.
Key electrical characteristics include typical rise and fall times of 20ns and 15ns respectively, with propagation delays of 25ns (falling) and 35ns (rising). These specifications enable fast and precise switching transitions, minimizing switching losses. The UCC27424DR is housed in a standard 8-pin SOIC package, suitable for surface mounting.
Applications for the UCC27424DR include switch mode power supplies, DC/DC converters, motor controllers, and line drivers. Its robust design and high current capability make it a reliable choice for demanding power management circuits. The device also includes enable functions for enhanced operational control.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.46 | $0.46 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The input supply voltage range is 4V to 15V.
The operating temperature range is -40°C to 105°C.
The UCC27424DR is available in an 8-SOIC surface-mount package.
It has two independent channels.
The peak output current is 4A per channel.
It can drive both N-channel and P-channel MOSFETs.
Typical rise time is 20ns and fall time is 15ns with a 1.8nF load.