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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Texas Instruments UCC27323DR is a high-speed dual low-side power-MOSFET driver. It delivers 4A source and 4A sink peak current, crucial for effectively driving MOSFETs at the Miller Plateau Region. This device features a Bi-CMOS output architecture and TTL/CMOS inputs that are independent of the supply voltage, offering excellent noise immunity due to wide input hysteresis.
Designed for applications such as switch-mode power supplies and DC-DC converters, the UCC27323DR operates with a supply voltage ranging from 4.5V to 15V. It provides independent channels and supports N-Channel and P-Channel MOSFETs. The driver exhibits rise and fall times of 20ns and 15ns respectively at a 1.8nF load, with typical propagation delays of 35ns for rise and 25ns for fall.
The UCC27323DR is housed in an 8-SOIC package with surface mount mounting type. Its operating temperature range is -55°C to 150°C (TJ). The device is suitable for various power management applications requiring efficient MOSFET driving.
| Qty | Low | High |
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| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The UCC27323DR provides 4A peak source and 4A peak sink current.
The operating supply voltage range is 4.5V to 15V.
The operating temperature range is -55°C to 150°C (TJ).
The UCC27323DR is available in an 8-SOIC package.
The rise time is 20ns and the fall time is 15ns at a 1.8nF load.