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UCC27211DDAR The Texas Instruments UCC27211DDAR is a 120V half-bridge gate driver designed for driving N-channel MOSFETs. It offers independent control for high-side and low-side configurations.
Mfr Part #:

UCC27211DDAR

Available from 2 distributors
Mfr Name: Texas Instruments
Texas Instruments
The Texas Instruments UCC27211DDAR is a 120V half-bridge gate driver designed for driving N-channel MOSFETs. It offers independent control for high-side and low-side configurations.
✓ Total Stock: 38,190 pcs
$ Price Range: $0.95

UCC27211DDAR Available from 2 distributors

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✓ Non-Authorised
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Romaks Technologies ✓
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34,769 pcs
On Request
34769 pcs On Request 1 On Request On Request On Request On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
3,421 pcs
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3421 pcs On Request 1 On Request On Request On Request On Request On Request
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UCC27211DDAR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Channel Type
Current
Driven Configuration
Gate Type
High Side Voltage
Input Type
Logic Voltage
Mounting Type
Number of Drivers
Operating Temperature
Rise
SVHC Present
Supplier Device Package
Supplier Package
Voltage
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UCC27211DDAR Description

Short technical summary and product information.

The Texas Instruments UCC27211DDAR is an active half-bridge gate driver IC. It is designed to drive two N-channel MOSFETs in a high-side and low-side configuration with independent inputs.

 

Key electrical specifications include a maximum bootstrap supply voltage of 120V, an input supply voltage range of 8V to 17V, and a peak output current of 4.5A. The device features a fast propagation delay time of 0.02µs, a rise time of 7.2ns, and a fall time of 5.5ns. It also includes an 8V typical undervoltage lockout for both high-side and low-side drivers.

 

The UCC27211DDAR supports TTL compatible inputs and offers negative voltage handling. It is available in industry-standard packages such as 8-SO PowerPad.

 

This gate driver is suitable for various power management applications requiring efficient switching of MOSFETs in a half-bridge topology. Its robust design and specified operating temperature range of -40°C to 150°C make it a reliable choice for demanding environments.

UCC27211DDAR Quick Information

Product Type: Gate Driver
Canonical Name: UCC27211DDAR Half Bridge Gate Driver
Subcategory: Half-Bridge Driver

UCC27211DDAR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

UCC27211DDAR Estimated Pricing

Qty Low High
1+ $0.95 $0.95

Estimated market price range - modelled values for guidance only, not live distributor offers.

UCC27211DDAR Features

  • Drives two N-channel MOSFETs.
  • 120V maximum bootstrap supply voltage.
  • 4.5A peak output current capability.
  • Fast 7.2ns rise and 5.5ns fall times.
  • Operates from 8V to 17V input supply.

UCC27211DDAR Applications

  • Ideal for half-bridge power converters.
  • Suitable for high-side and low-side switching.
  • Used in power supply designs.
  • Efficient MOSFET driving applications.

UCC27211DDAR FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum bootstrap supply voltage for the UCC27211DDAR?

The maximum bootstrap supply voltage is 120 V.

What is the input supply voltage range for this gate driver?

The input supply voltage range is 8 V to 17 V.

What is the peak output current of the UCC27211DDAR?

The peak output current is 4.5 A.

What is the operating temperature range?

The operating temperature range is -40°C to 150°C.

What is the undervoltage lockout typical value?

The typical undervoltage lockout is 8 V.

What are the typical rise and fall times?

The typical rise time is 7.2 ns and the typical fall time is 5.5 ns.

What package type is the UCC27211DDAR supplied in?

It is supplied in an 8-SO PowerPad package.

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