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UC2709N The Texas Instruments UC2709N is a dual-channel, low-side gate driver IC designed for driving MOSFETs and IGBTs. It operates with an input supply voltage range of 5V to 40V and provides a peak output current of 1.5A per channel.
Mfr Part #:

UC2709N

Available from 2 distributors
Mfr Name: Texas Instruments
Texas Instruments
The Texas Instruments UC2709N is a dual-channel, low-side gate driver IC designed for driving MOSFETs and IGBTs. It operates with an input supply voltage range of 5V to 40V and provides a peak output current of 1.5A per channel.
✓ Total Stock: 134 pcs
$ Price Range: $6.92

UC2709N Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
90 pcs
On Request
90 pcs On Request 1 On Request On Request On Request On Request On Request
Braun Electronic Components ✓
Non-Authorised Inventory information
44 pcs
On Request
44 pcs On Request 1 On Request On Request On Request On Request On Request
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UC2709N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Channel Type
Current
Driven Configuration
Gate Type
Input Type
Logic Voltage
Mounting Type
Number of Channels
Number of Drivers
Operating Temperature
Rise
Supplier Device Package
Voltage
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UC2709N Description

Short technical summary and product information.

The UC2709N from Texas Instruments is a dual-channel gate driver IC, specifically designed for efficiently switching power MOSFETs and IGBTs. It features a wide input supply voltage range from 5V to 40V, making it versatile for various power applications. Each of the two independent channels can deliver a peak output current of 1.5A, suitable for driving capacitive gates.

 

This device operates within a temperature range of -40°C to 85°C. It supports through-hole mounting and comes in an 8-PDIP package. The input logic is inverting, with TTL compatibility and a logic voltage range of 0.8V and 2.2V. Key electrical characteristics include a rise time of 40ns and a fall time of 40ns into a 1000pF load, with a propagation delay of 0.025µs.

 

The UC2709N is an effective solution for providing fast turn-on and turn-off signals to power devices. Its design includes features like thermal shutdown protection, contributing to system reliability. The driver configuration is low-side, and it is compatible with N-channel and P-channel MOSFETs.

UC2709N Quick Information

Product Type: Gate Driver
Canonical Name: UC2709N Dual-Channel Gate Driver
Subcategory: Low-Side Gate Driver

UC2709N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

UC2709N Estimated Pricing

Qty Low High
1+ $6.92 $6.92

Estimated market price range - modelled values for guidance only, not live distributor offers.

UC2709N Features

  • Dual-channel low-side gate driver.
  • Wide 5V to 40V supply voltage range.
  • 1.5A peak source/sink output current.
  • Fast 40ns rise and fall times.
  • Operates from -40°C to 85°C.

UC2709N Applications

  • Driving power MOSFETs and IGBTs.
  • Power supply switching applications.
  • Motor control circuits.
  • Industrial power systems.

UC2709N FAQs

7 frequently asked questions generated from this part’s specifications.
What is the peak output current of the UC2709N?

The UC2709N has a peak output current of 1.5A per channel.

What is the input supply voltage range for the UC2709N?

The input supply voltage range is 5V to 40V.

What type of input logic does the UC2709N use?

The UC2709N uses TTL input threshold logic.

What is the operating temperature range of the UC2709N?

The operating temperature range is -40°C to 85°C.

What package is the UC2709N available in?

The UC2709N is available in an 8-DIP (0.300", 7.62mm) through-hole package, also known as 8-PDIP.

What is the propagation delay time of the UC2709N?

The propagation delay time is 0.025µs.

What type of MOSFETs can the UC2709N drive?

The UC2709N can drive both N-channel and P-channel MOSFETs.

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