| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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72,000 pcs
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72000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba U1ZB75 is a silicon diffused Zener diode from the U1ZB6.8~U1ZB390 series, designed for constant voltage regulation and transient suppression applications. This component offers a Zener voltage typically rated at 7.5V, with a minimum of 6.8V and a maximum of 8.3V at 25°C.
With an average power dissipation capability of 1.0W, the U1ZB75 is suitable for various power management tasks. It operates within a junction temperature range of -40°C to 150°C and a storage temperature range of -40°C to 150°C. The diode is housed in a surface-mounting plastic mold package, identified as 3-4D1A, and has a weight of approximately 0.06g.
Key electrical characteristics include a typical forward voltage of 1.2V at 10mA and a maximum reverse current of 10µA at 4.5V. The typical Zener impedance is 30Ω at 10mA, with a temperature coefficient of 4.5mV/°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.92 | $1.92 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Zener voltage range of the U1ZB75 is from 6.8V to 8.3V.
The maximum power dissipation of the U1ZB75 is 1.0W.
The U1ZB75 uses a 3-4D1A surface mount package.
The typical forward voltage at 10mA is 1.2V.
The junction temperature range is from -40°C to 150°C.