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TY30N50E The TY30N50E is a Power Field Effect Transistor from On Semiconductor. It offers a breakdown voltage of 500V and a maximum power dissipation of 300W.
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TY30N50E

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The TY30N50E is a Power Field Effect Transistor from On Semiconductor. It offers a breakdown voltage of 500V and a maximum power dissipation of 300W.
✓ Total Stock: 318 pcs
$ Price Range: $2.27

TY30N50E Available from 1 distributor

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✓ Non-Authorised
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318 pcs
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TY30N50E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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TY30N50E Description

Short technical summary and product information.

The TY30N50E is a Power Field Effect Transistor manufactured by On Semiconductor. This component is designed for power applications, featuring a breakdown voltage of 500V and a drain-source resistance of 150mΩ.

 

With a maximum power dissipation rating of 300W, the TY30N50E is suitable for demanding applications. It operates within a temperature range of -55°C to 150°C, ensuring reliability in various environmental conditions. The transistor is housed in a TO-264 package.

 

This device is part of the broader category of discrete semiconductor products, specifically within transistors, FETs, and MOSFETs. Its specifications make it a candidate for power switching and amplification circuits where high voltage and power handling are required.

TY30N50E Quick Information

Product Type: Power Field Effect Transistor
Canonical Name: TY30N50E Power Field Effect Transistor
Subcategory: FETs, MOSFETs - Single

TY30N50E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TY30N50E Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

TY30N50E Features

  • 500V breakdown voltage rating.
  • 150mΩ drain-source resistance.
  • 300W maximum power dissipation.
  • Operates from -55°C to 150°C.
  • TO-264 package for power applications.

TY30N50E Applications

  • Suitable for high-voltage power circuits.
  • Used in power switching applications.
  • Ideal for amplification stages.
  • Designed for demanding thermal conditions.

TY30N50E FAQs

4 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the TY30N50E?

The breakdown voltage of the TY30N50E is 500V.

What is the maximum power dissipation for the TY30N50E?

The maximum power dissipation for the TY30N50E is 300W.

What is the operating temperature range of the TY30N50E?

The TY30N50E operates from -55°C to 150°C.

What package type is the TY30N50E supplied in?

The TY30N50E is supplied in a TO-264 package.

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