| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The TXS4558RUKR from Texas Instruments is a complete dual-supply standby Smart Identity Module (SIM) card solution designed for interfacing wireless baseband processors with two individual SIM subscriber cards. This device extends a single SIM/UICC interface to support two SIMs/UICCs, complying with ISO/IEC Smart-Card Interface requirements and GSM/3G mobile standards.
Key electrical features include a high-speed level translator supporting Class-B (2.95 V) and Class-C (1.8 V) interfaces. It incorporates two low-dropout (LDO) voltage regulators with selectable output voltages of 2.95 V or 1.8 V. The voltage-level translator operates from a VCC range of 1.65 V to 3.3 V, while the integrated LDOs accept input battery voltages from 2.3 V to 5.5 V. The LDOs provide 50 mA of current with a very low dropout of 100 mV (max) at 50 mA.
Control and communication are managed through simple GPIO inputs, allowing switching between SIM cards and mode selection, including an isolated clock stop mode for both SIMs. The device offers robust ESD protection, exceeding JESD 22 standards with up to 2000 V (HBM) and 8 kV for SIM pins.
The TXS4558RUKR is housed in a 20-pin WQFN package measuring 3 mm x 3 mm, suitable for surface mount applications. It operates within a temperature range of -40°C to 85°C. The standard package quantity is 3,000 units on tape and reel.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.59 | $0.59 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The main supply operates from 1.65 V to 3.3 V. The battery input for the integrated LDO operates from 2.3 V to 5.5 V.
-40°C to 85°C.
20-WQFN (3x3) or 20-WFQFN exposed pad, surface mount.
Yes, it integrates a 50-mA low-dropout regulator with selectable output voltages of 1.8 V or 2.95 V.
2 kV Human-Body Model, 500 V Charged-Device Model, and 8 kV HBM on SIM pins.
2 bidirectional circuits.