| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,193 pcs
|
5193 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) |
The Toshiba TW048N65C,S1F is a high-performance Silicon Carbide (SiC) N-Channel MOSFET designed for demanding applications. It features a maximum drain-source voltage (Vdss) of 650V and a continuous drain current of 40A at case temperature.
Key electrical characteristics include a low on-resistance (Rds On) of 65mOhm at 20A and 18V, and a gate charge (Qg) of 41nC at 18V. The device operates at temperatures up to 175°C and has a maximum power dissipation of 132W.
This MOSFET utilizes SiCFET technology, offering advantages in efficiency and thermal performance compared to traditional silicon MOSFETs. It is housed in a TO-247 package with a through-hole mounting type, making it suitable for various power electronics designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 650 V.
The maximum on-resistance (Rds On) is 65 mOhm at 20A and 18V.
The operating temperature range is up to 175°C.
It is supplied in a TO-247 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.