Mfr Part #:

TTK2837

Mfr Name: Toshiba

The Toshiba TTK2837 is an N-Channel MOS Field Effect Transistor designed for switching regulator applications. It offers a 500V drain-source breakdown voltage and low on-resistance.

✓ Total Stock: 170 pcs

$ Price Range: $2.54

TTK2837 Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Fe Components ✓ Non-Authorised Inventory information	170 pcs On Request	170 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
HK XINYUANXIN ELECTRONIC TECH LIMITED ✓ Non-Authorised Inventory information	On Request On Request	On Request	On Request	1	On Request	On Request	On Request	On Request	On Request

TTK2837 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Toshiba
Input Capacitance	2500 pF
Mounting Type	Surface Mount
Storage Temperature	-55 to 150 °C
Turn Off Time	300 ns
Turn On Time	95 ns

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TTK2837 Description

Short technical summary and product information.

The Toshiba TTK2837 is a Silicon N Channel MOS Type Field Effect Transistor, specifically designed for switching regulator applications. It boasts a high drain-source breakdown voltage of 500V and a low drain-source on-resistance (RDS(ON)) of 0.22 Ω (typ.) at 10A.

Key electrical characteristics include a typical forward transfer admittance (|Yfs|) of 8.5 S and a low leakage current (IDSS) of 10 µA at 500V. The enhancement mode transistor has a gate threshold voltage (Vth) ranging from 1.5 to 3.0V.

With a maximum continuous drain current (ID) of 20A and a pulse drain current (IDP) of 80A, the TTK2837 is capable of handling significant power. It has a maximum power dissipation (PD) of 280W at 25°C case temperature and a channel temperature limit of 150°C.

The device comes in an SC-65 package, suitable for surface mounting. Thermal resistance from channel to case is 0.466 °C/W, and from channel to ambient is 50 °C/W. It is also noted as an electrostatic-sensitive device and should be handled with care.

TTK2837 Quick Information

Product Type: MOSFET

Canonical Name: Toshiba TTK2837 Silicon N Channel MOS Field Effect Transistor

Subcategory: N-Channel

TTK2837 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

TTK2837 Estimated Pricing

Qty	Low	High
1+	$2.54	$2.54

Estimated market price range - modelled values for guidance only, not live distributor offers.

TTK2837 Features

500V drain-source breakdown voltage.
Low 0.22 Ohm typical on-resistance.
High 8.5 S typical forward admittance.
Suitable for switching regulator applications.
SC-65 package for surface mounting.

TTK2837 Applications

Ideal for switching regulator circuits.
Used in power supply designs.
Suitable for high voltage applications.
Efficient power switching.

TTK2837 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source breakdown voltage for the TTK2837?

The maximum drain-source breakdown voltage (Vds br) for the TTK2837 is 500 V.

What is the typical drain-source on-resistance of the TTK2837?

The typical drain-source on-resistance (Rds on) for the TTK2837 is 0.22 Ω at a gate-source voltage of 10 V and a drain current of 10 A.

What is the typical forward transfer admittance of the TTK2837?

The typical forward transfer admittance (|Yfs|) for the TTK2837 is 8.5 S.

What is the maximum continuous drain current for the TTK2837?

The maximum continuous drain current (ID) for the TTK2837 is 20 A.

What is the maximum channel temperature for the TTK2837?

The maximum channel temperature (Tch) for the TTK2837 is 150 °C.

What is the package type for the TTK2837?

The TTK2837 is supplied in an SC-65 package.