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25,000 pcs
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25000 pcs | On Request | 1 | On Request | On Request | 1428+ | On Request | On Request |
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The TOS TTC5200(Q) is a high-performance NPN bipolar junction transistor (BJT) from Toshiba, specifically engineered for demanding power amplifier applications. It is recommended for use in the output stage of 100-W high-fidelity audio frequency amplifiers.
This transistor boasts a high collector-emitter voltage (VCEO) of 230V (min) and a substantial collector current (IC) capability of 15A. Its complementary counterpart is the TTA1943. The TTC5200(Q) can handle a collector power dissipation (PC) of up to 150W at a case temperature of 25°C.
Packaged in the 2-21F1A configuration, this device is suitable for through-hole mounting. Its electrical characteristics include a DC current gain (hFE) ranging from 80 to 160 at 1A and 35 at 7A, a collector-emitter saturation voltage (VCE(sat)) of up to 3V, and a base-emitter voltage (VBE) of up to 1.5V. The transition frequency (fT) is typically 30MHz, and the collector output capacitance (Cob) is around 145pF.
With its robust specifications, the TTC5200(Q) is a reliable choice for audio amplification and other high-power applications requiring a dependable NPN transistor.
The collector-emitter voltage (VCEO) is 230V.
The package type is 2-21F1A.
Junction temperature up to 150°C, storage temperature from -55 to 150°C.
The maximum collector current is 15A.
The DC current gain ranges from 80 to 160 at VCE=5V and IC=1A.
The collector power dissipation is 150W at a case temperature of 25°C.
The complementary part is TTA1943.