| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,542 pcs
|
3542 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The ROHM Semiconductor TT8J21TR is a dual P-channel MOSFET with a 20V drain-to-source voltage rating and a continuous drain current capability of 2.5A. This device is designed for surface mount applications and comes in an 8-TSST package. It offers a low Rds On of 68mOhm at 2.5A and 4.5V Vgs, making it suitable for various switching and amplification tasks. The MOSFET operates at temperatures up to 150°C (TJ) and features a logic-level gate for compatibility with lower voltage control signals. Its input capacitance is rated at 1270pF at 10V, and gate charge is 12nC at 4.5V. The device is specified with a power dissipation of 650mW. It is classified as RoHS3 compliant.
This MOSFET is ideal for applications requiring efficient power switching and control. The dual P-channel configuration allows for flexible circuit design. Its surface mount package and logic-level gate feature simplify integration into compact electronic systems. The operating temperature range and robust electrical characteristics ensure reliable performance in demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) for the TT8J21TR is 20V.
The TT8J21TR MOSFET has a continuous drain current of 2.5A.
The Rds On for the TT8J21TR is a maximum of 68mOhm when measured at 2.5A drain current and 4.5V gate-source voltage.
The TT8J21TR can operate at junction temperatures up to 150°C.
The TT8J21TR MOSFET is supplied in an 8-SMD, Flat Lead package, specifically the 8-TSST supplier device package.
Yes, the TT8J21TR is RoHS3 compliant.