| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,660 pcs
|
1660 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Forward Voltage | |
| Height | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Orientation | |
| Peak Forward Current | |
| Power Dissipation | |
| Power Rating | |
| Product Type | |
| Radiant Intensity (Ie) Min @ If | |
| Reverse Voltage | |
| Storage Temperature | |
| Type | |
| Viewing Angle | |
| Voltage | |
| Wavelength | |
| Width |
The Vishay TSUS5400 is an infrared emitting diode designed for applications requiring 950nm wavelength emission. It is manufactured using GaAs technology and molded in a blue-gray tinted plastic package.
Key electrical specifications include a maximum forward current of 150mA, a peak wavelength of 950nm, and a typical radiant intensity of 17mW/sr at 100mA. The diode has a typical forward voltage of 1.7V and a viewing angle of ±22°.
This component is housed in a leaded, T-1¾ package with dimensions of Ø 5mm. It is suitable for high pulse current operation and offers good spectral matching with silicon photodetectors. The operating temperature range is -40°C to +85°C.
Applications for the TSUS5400 include infrared remote control systems, free air transmission systems, and as an emitter in transmissive and reflective sensors. Its low forward voltage and small package requirements make it ideal for space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The peak wavelength of the TSUS5400 is 950 nm.
The typical radiant intensity of the TSUS5400 is 17 mW/sr at 100mA.
The TSUS5400 is available in a T-1¾ radial package.
The operating temperature range for the TSUS5400 is -40°C to +85°C.
The TSUS5400 is RoHS3 Compliant.