| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
615,460 pcs
|
615460 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Taiwan Semiconductor TSM650P02CX RFG is a P-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 20V and can handle a continuous current of 4.1A at the case temperature.
With a low on-resistance (Rds On) of 65mOhm at 3A and 4.5V gate-source voltage, this MOSFET ensures efficient power transfer. The gate threshold voltage (Vgs(th)) is a maximum of 800mV at 250µA, and the maximum gate-source voltage is ±10V.
Operating at temperatures up to 150°C (TJ), the TSM650P02CX RFG has a maximum power dissipation of 1.56W (Tc). It is housed in a compact SOT-23 surface-mount package, making it suitable for space-constrained designs.
This component is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 20V.
The continuous current rating is 4.1A at the case temperature.
The maximum on-resistance (Rds On) is 65mOhm when the current is 3A and the gate-source voltage is 4.5V.
The operating temperature range is up to 150°C (TJ).
The MOSFET is supplied in a SOT-23 package.
Yes, the RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.