| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
300 pcs
|
300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Mounting Type | |
| Tape & Reel |
The TSM3460CX6 is an N-Channel MOSFET manufactured by Taiwan Semiconductor, designed with advanced trench process technology for ultra-low on-resistance. It offers excellent thermal and electrical capabilities, making it suitable for battery switch applications, particularly in Li-ion battery packs.
Key electrical characteristics include a Drain-Source Voltage (VDS) of 20V and low on-state resistance (RDS(ON)) values, such as 22mΩ typical at VGS = 4.5V and ID = 6A. The device also features ESD protection.
Packaged in a compact SOT-26 surface-mount package, the TSM3460CX6 is supplied on tape and reel with 3,000 units per reel. Its operating junction and storage temperature range is -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.32 | $1.32 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage (VDS) for the TSM3460CX6 is 20V.
The typical on-state resistance (RDS(ON)) at VGS = 4.5V and ID = 6A is 22mΩ.
The typical Gate Threshold Voltage (VGS(TH)) is 0.85V.
The TSM3460CX6 is available in a SOT-26 package.
The TSM3460CX6 is supplied on tape and reel with 3,000 units per reel.
The operating junction and storage temperature range is -55°C to +150°C.