| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,569 pcs
|
2569 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
| Mounting Type | |
| SVHC Present |
The TSM2318CX is a 40V N-Channel MOSFET manufactured by TSC, utilizing an advanced trench process technology and a high-density cell design for ultra-low on-resistance. This component is suitable for applications such as load switches and stepper motor control.
Key electrical specifications include a Drain-Source Voltage (VDS) of 40V and a Continuous Drain Current (ID) of 3.9A. The Drain-Source On-State Resistance (RDS(ON)) is rated at a maximum of 45mΩ at VGS = 10V and 3.5A. Dynamic characteristics include a total gate charge (Qg) of 10nC, input capacitance (Ciss) of 540pF, and output capacitance (Coss) of 80pF.
This MOSFET features fast switching times with a turn-on delay of 5nS and a turn-off fall time of 15nS. It operates within a junction temperature range of -55°C to +150°C. The device is packaged in a SOT-23 surface-mount package and is supplied on a 7-inch reel with 3000 pieces per reel.
The TSM2318CX is designed for efficient power management and switching applications, offering a balance of performance and size for various electronic designs.
The Drain-Source Breakdown Voltage (BVDSS) is 40V.
The Gate Threshold Voltage (VGS(TH)) is typically between 1V and 3V.
The maximum continuous drain current (ID) is 3.9A.
The Drain-Source On-State Resistance (RDS(ON)) is typically 36mΩ to a maximum of 45mΩ at VGS = 10V and ID = 3.9A.
The TSM2318CX is supplied in a SOT-23 package.
The operating junction and storage temperature range is -55°C to +150°C.
Yes, the TSM2318CX is a Halogen Free product.