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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
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The TSM2311CX RF is a P-channel MOSFET manufactured by Taiwan Semiconductor (TSC). This component is designed for various electronic applications requiring efficient switching and amplification.
Key electrical characteristics include a drain-source breakdown voltage of 20V and a continuous drain current of 4A. The on-resistance is specified at a maximum of 45 mOhms, ensuring low power loss during operation. The gate threshold voltage is 450mV, and the gate-source voltage can reach up to 10V.
This MOSFET operates within a temperature range of -55C to +150C, making it suitable for demanding environments. It features a power dissipation of 900mW. The channel mode is enhancement, and it is configured as a single P-channel transistor.
The TSM2311CX RF is supplied in a SOT-23-3 surface-mount package, facilitating automated assembly processes. It is typically supplied on a reel for high-volume manufacturing.
The drain-source breakdown voltage is 20 V.
The continuous drain current is 4 A.
The on-resistance is 45 mOhms.
The gate source threshold voltage is 450 mV.
The operating temperature range is -55 C to +150 C.
It is supplied in a SOT-23-3 package.
It is typically supplied on a reel.