TSHG6410 The Vishay Dale TSHG6410 is an 850nm infrared emitting diode designed for high-speed applications. It features a T-1 3/4 package and through-hole mounting.
Mfr Part #:

TSHG6410

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale TSHG6410 is an 850nm infrared emitting diode designed for high-speed applications. It features a T-1 3/4 package and through-hole mounting.
Total Stock: 131,600 pcs
$ Price Range: $0.99

TSHG6410 Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
116,000 pcs
116000 pcs On Request 1 On Request On Request On Request On Request 2026-02-16 21:33:16
Non-Authorised Inventory information
15,600 pcs
15600 pcs On Request 1 On Request On Request 13+ On Request On Request

TSHG6410 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Angle of Half Intensity
Current
Junction Temperature
Mounting Type
Operating Temperature
Orientation
Peak Forward Current
Power Dissipation
Radiant Intensity (Ie) Min @ If
Reverse Voltage
Rise Time
Storage Temperature
Surge Forward Current
Type
Viewing Angle
Voltage
Wavelength

TSHG6410 Description

Short technical summary and product information.

The Vishay Dale TSHG6410 is an infrared emitting diode with a peak wavelength of 850 nm, based on surface emitter chip technology. It is molded in a clear, untinted plastic package and designed for high radiant power and high speed.

 

Key electrical specifications include a nominal forward current of 100mA and a forward voltage of 1.5V. The radiant intensity is a minimum of 45mW/sr at 100mA, with an angle of half intensity of ±15° and a viewing angle of 36°. The diode has a rise time of 10 ns.

 

Absolute maximum ratings include a reverse voltage of 5V, a peak forward current of 200mA, and a surge forward current of 1A. Power dissipation is limited to 180mW at 25°C ambient temperature. The operating temperature range is -40°C to 85°C, with a storage temperature range of -40°C to 100°C.

 

This component is suitable for high-speed remote control and free-air data transmission systems requiring high modulation frequencies or high data transmission rates, including systems compliant with IrDA requirements.

TSHG6410 Quick Information

Product Type: Infrared Emitting Diode
Canonical Name: TSHG6410 Infrared Emitting Diode
Subcategory: Infrared

TSHG6410 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TSHG6410 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

TSHG6410 Features

  • 850 nm peak wavelength infrared emission.
  • High radiant power and high speed.
  • 100mA nominal forward current.
  • 1.5V nominal forward voltage.
  • Through hole mounting, T-1 3/4 package.

TSHG6410 Applications

  • High speed remote control systems.
  • Free air data transmission.
  • IrDA compliant systems.
  • ASK/FSK coded transmission.

TSHG6410 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the peak wavelength of the TSHG6410 infrared emitting diode?

The peak wavelength is 850 nm.

What is the forward current for the TSHG6410?

The nominal forward current is 100 mA.

What is the forward voltage of the TSHG6410?

The nominal forward voltage is 1.5 V.

What is the minimum radiant intensity of the TSHG6410 at 100mA?

The minimum radiant intensity is 45 mW/sr at 100mA.

What is the operating temperature range for the TSHG6410?

The operating temperature range is -40°C to 85°C.

How is the TSHG6410 mounted?

The TSHG6410 is mounted using the through-hole method.

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