| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,988 pcs
|
3988 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay TSHA6503 is an infrared emitting diode utilizing GaAlAs technology, designed for applications requiring 875 nm wavelength emission. It is housed in a clear, untinted T-1¾ plastic package with a diameter of 5 mm.
Key electrical characteristics include a typical peak wavelength of 875 nm and an angle of half intensity of ±24°. The diode has a low forward voltage, typically 1.8 V at 100 mA, and is suitable for high pulse current operation. The maximum forward current is rated at 100 mA, with a peak forward current of 200 mA and a surge forward current of 2.5 A.
This component is designed for infrared remote control and free air data transmission systems. Its spectral characteristics are well-matched with silicon photodetectors, making it suitable for systems with glass panes in the transmission space due to the low absorption of 875 nm radiation in glass.
The TSHA6503 operates within an ambient temperature range of -40°C to +85°C and has a maximum junction temperature of 100°C. It is supplied in a bulk package with a minimum order quantity of 4000 pieces.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
T-1¾, 5mm diameter through-hole package.
-40°C to +85°C.
875 nm.
1.8 V at 100 mA.
600 ns.
100 mA.
±24°.