| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | 534 | On Request | On Request |
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The Vishay TSHA6502 is a leaded infrared emitting diode utilizing GaAlAs technology. It operates with a peak wavelength of 875 nm and a typical angle of half intensity of ±24 degrees. The diode is molded in a clear, untinted T-1¾ plastic package with a 5 mm diameter.
Key electrical characteristics include a typical forward voltage of 1.8V at 100mA and a maximum power dissipation of 180mW. It is suitable for high pulse current operation and offers good spectral matching with silicon photodetectors. The operating temperature range is -40°C to +85°C.
This emitter series is designed for applications such as infrared remote control and free air data transmission systems. Its suitability for systems with panes in the transmission space between emitter and detector is noted due to the low absorption of 875 nm radiation in glass. The component is lead-free and RoHS 2002/95/EC compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.22 | $2.22 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The peak wavelength is 875 nm.
The typical angle of half intensity is ±24°.
The typical forward voltage is 1.8V at 100mA.
The operating temperature range is -40°C to +85°C.
The package type is T-1¾.
Yes, the TSHA6502 is RoHS3 Compliant.