| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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19,000 pcs
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19000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Forward Current | |
| Forward Voltage | |
| Junction Temperature | |
| Mounting Type | |
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| Power Dissipation | |
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| Tape & Reel |
The TSHA5502 from Vishay Semiconductors is an infrared emitting diode utilizing GaAlAs on GaAlAs technology. It features a peak wavelength of 875 nm and is molded in a clear, untinted T-1 3/4 plastic package with leads and stand-off.
This diode is designed for applications such as infrared remote control and free air data transmission systems. Its spectral characteristics are well-matched with silicon photodetectors, making it suitable for systems with panes in the transmission space between emitter and detector due to the low absorption of 875 nm radiation in glass.
Key electrical characteristics include a typical forward voltage of 1.7V at 100mA, a maximum forward current of 100mA, and a maximum power dissipation of 180mW at 25°C. The angle of half intensity is ±24°, and the rise time is 600ns.
The operating temperature range is from -40°C to +85°C, and it is RoHS compliant. The component is lead-free, adhering to RoHS 2002/95/EC and WEEE 2002/96/EC directives.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.94 | $1.94 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The peak wavelength of the TSHA5502 is 875 nm.
The typical forward voltage for the TSHA5502 is 1.7V at 100mA.
The maximum forward current for the TSHA5502 is 100mA.
The operating temperature range for the TSHA5502 is -40°C to +85°C.
The TSHA5502 is supplied in a T-1 3/4 package.
Yes, the TSHA5502 is RoHS compliant.