SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
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540 pcs
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540 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The TRUESEMI TSF12N65M is a single N-Channel MOSFET belonging to the Planar MOSFET product family. It is designed for applications requiring high voltage and current handling capabilities.
Key electrical characteristics include a drain-source breakdown voltage of 650V and a continuous drain current of 12A at a gate-source voltage of 10V. The typical on-resistance (RDS(ON)) is 0.75 Ohms under the same conditions, ensuring efficient power transfer. The gate charge (Qg) is 52nC, which is a critical parameter for switching speed.
This MOSFET is available in TO-220F and TO-220 packages, suitable for various mounting requirements. Its 'Matured' product status indicates a stable and established component in the market.
This component is suitable for power supply designs, motor control, and other general-purpose power switching applications where high voltage and moderate current are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.30 | $0.30 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 650V.
The typical on-resistance is 0.75 Ohms.
The continuous drain current is 12A.
The typical gate charge is 52nC.
The TSF12N65M is available in TO-220F and TO-220 packages.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
