| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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15,000 pcs
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15000 pcs | On Request | 1 | On Request | On Request | 2004 | On Request | On Request |
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| Tape & Reel |
The Vishay TSDF1220 is a Silicon NPN Planar RF Transistor suitable for low noise applications such as preamplifiers, mixers, and oscillators in analog and digital TV systems, extending up to microwave frequencies.
Key electrical characteristics include a high transition frequency (fT) of 12 GHz, a very low noise figure of 1.2 dB at 2 GHz, and a power gain of 14 dB. The transistor operates with a collector-emitter voltage (VCEO) of 6V and a maximum collector current (IC) of 40mA. Its compact size and performance make it ideal for demanding RF designs.
Available in various plastic packages including SOT-143, SOT-143R, SOT-343, and SOT-343R, the TSDF1220 is designed for surface mounting. The absolute maximum ratings specify a junction temperature up to 150°C and a storage temperature range from -65°C to +150°C.
This RF transistor is well-suited for applications requiring high performance and low noise, such as in satellite tuners and other high-frequency communication systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.37 | $1.37 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The TSDF1220 has a minimum transition frequency (fT) of 12 GHz.
The typical noise figure for the TSDF1220 is 1.2 dB at 2 GHz.
The TSDF1220 has a maximum collector-emitter voltage of 6V, a maximum collector current of 40mA, and a maximum power dissipation of 200mW.
The TSDF1220 is available in SOT-143, SOT-143R, SOT-343, and SOT-343R packages.
The TSDF1220 is suitable for low noise applications such as preamplifiers, mixers, and oscillators in analog and digital TV systems, up to microwave frequencies.