LM285Z-2.5G
On Semiconductor
The On Semiconductor LM285Z-2.5G is a 2.5V shunt voltage reference. It offers a fixed output voltage and a 20mA current rating.
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45,150 pcs
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45150 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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The TS13003BCT B0G is a high voltage NPN silicon transistor manufactured by Taiwan Semiconductor. It is designed for high voltage and high speed switching applications.
Key electrical characteristics include a collector-emitter voltage (BVCEO) of 400V and a collector-base voltage (BVCBO) of 700V. The continuous collector current (IC) is rated at 1.5A, with a typical collector-emitter saturation voltage (VCE(SAT)) of 0.8V at IC = 0.5A and IB = 0.1A.
This transistor features a silicon triple diffused type structure and comes in a standard TO-92 package, suitable for through-hole mounting. Its high voltage capability makes it suitable for various power switching applications where reliability and performance are critical.
While compliance data like RoHS, REACH, and MSL are listed, they are currently marked with low confidence and require verification from official sources.
The collector-emitter breakdown voltage (BVCEO) is 400V.
The collector-base breakdown voltage (BVCBO) is 700V.
The continuous collector current (IC) is 1.5A.
The typical collector-emitter saturation voltage (VCE(SAT)) is 0.8V at IC = 0.5A and IB = 0.1A.
It is available in a TO-92 package.
The mounting type is through-hole.
