TRS24N65D The Toshiba TRS24N65D is a SiC Schottky Barrier Diode with a repetitive peak reverse voltage of 650V and a forward DC current of up to 24A. It is packaged in a TO-247 case.
Mfr Part #:

TRS24N65D

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TRS24N65D is a SiC Schottky Barrier Diode with a repetitive peak reverse voltage of 650V and a forward DC current of up to 24A. It is packaged in a TO-247 case.
✓ Total Stock: 100 pcs

TRS24N65D Available from 1 distributor

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✓ Non-Authorised
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100 pcs
100 pcs On Request 1 On Request On Request 14+PB On Request On Request

TRS24N65D Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Junction Temperature
Mounting Type
Package / Case
Storage Temperature

TRS24N65D Description

Short technical summary and product information.

The Toshiba TRS24N65D is a Silicon Carbide (SiC) Schottky Barrier Diode designed for high-performance power applications. It features a repetitive peak reverse voltage (VRRM) of 650V and supports a forward DC current of 12A per leg or 24A for both legs.

 

Key electrical characteristics include a peak forward voltage (VFM) typically around 1.27V at 6A per leg and a junction capacitance (Cj) of 65pF at 650V. The diode also offers a thermal resistance junction-to-case of 1.68°C/W per leg.

 

This component is housed in a TO-247 package, suitable for through-hole mounting. Its robust design makes it suitable for applications such as Power Factor Correction (PFC), Solar Inverters, Uninterruptible Power Supplies (UPS), and DC-DC Converters.

 

The diode has a maximum junction temperature of 175°C and a storage temperature range of -55°C to 175°C. The start of commercial production for this part was in February 2014.

TRS24N65D Quick Information

Product Type: SiC Schottky Barrier Diode
Canonical Name: SiC Schottky Barrier Diode TRS24N65D
Subcategory: Schottky Barrier Diode

TRS24N65D Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TRS24N65D Features

  • 650V repetitive peak reverse voltage.
  • Up to 24A forward DC current.
  • TO-247 package for through-hole mounting.
  • Suitable for power factor correction.
  • SiC Schottky Barrier Diode technology.

TRS24N65D Applications

  • Power Factor Correction circuits.
  • Solar inverter applications.
  • Uninterruptible Power Supplies.
  • DC-DC converter designs.

TRS24N65D FAQs

6 frequently asked questions generated from this part’s specifications.
What is the repetitive peak reverse voltage of the TRS24N65D?

The repetitive peak reverse voltage (VRRM) for the TRS24N65D is 650 V.

What is the forward DC current rating for the TRS24N65D?

The forward DC current (IF(DC)) is rated at 12 A per leg or 24 A for both legs.

What package type is the TRS24N65D supplied in?

The TRS24N65D is supplied in a TO-247 package.

What are the applications for the TRS24N65D?

Applications include Power Factor Correction, Solar Inverters, Uninterruptible Power Supplies, and DC-DC Converters.

What is the typical peak forward voltage of the TRS24N65D at 6A?

The typical peak forward voltage (VFM) at 6A per leg is 1.27V.

What is the typical junction capacitance of the TRS24N65D?

The typical junction capacitance (Cj) is 65 pF at 650V reverse voltage and 1 MHz.

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