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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | 14+PB | On Request | On Request |
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The Toshiba TRS24N65D is a Silicon Carbide (SiC) Schottky Barrier Diode designed for high-performance power applications. It features a repetitive peak reverse voltage (VRRM) of 650V and supports a forward DC current of 12A per leg or 24A for both legs.
Key electrical characteristics include a peak forward voltage (VFM) typically around 1.27V at 6A per leg and a junction capacitance (Cj) of 65pF at 650V. The diode also offers a thermal resistance junction-to-case of 1.68°C/W per leg.
This component is housed in a TO-247 package, suitable for through-hole mounting. Its robust design makes it suitable for applications such as Power Factor Correction (PFC), Solar Inverters, Uninterruptible Power Supplies (UPS), and DC-DC Converters.
The diode has a maximum junction temperature of 175°C and a storage temperature range of -55°C to 175°C. The start of commercial production for this part was in February 2014.
The repetitive peak reverse voltage (VRRM) for the TRS24N65D is 650 V.
The forward DC current (IF(DC)) is rated at 12 A per leg or 24 A for both legs.
The TRS24N65D is supplied in a TO-247 package.
Applications include Power Factor Correction, Solar Inverters, Uninterruptible Power Supplies, and DC-DC Converters.
The typical peak forward voltage (VFM) at 6A per leg is 1.27V.
The typical junction capacitance (Cj) is 65 pF at 650V reverse voltage and 1 MHz.