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40 pcs
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40 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
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| Technology |
The Toshiba TRS12N65D is a Schottky diode array designed for high-voltage applications. It features a maximum DC reverse voltage of 650V and an average rectified current of 6A per diode. The forward voltage is a maximum of 1.7V at 6A, and the reverse leakage current is 90 µA at 650V.
This diode array operates at a maximum junction temperature of 175°C. It utilizes Schottky technology for fast recovery times. The component is housed in a TO-247 package and is intended for through-hole mounting.
Key electrical characteristics include its 650V reverse voltage rating and 6A current handling capability. The low forward voltage drop and fast switching speed make it suitable for various power supply and rectification applications. The TO-247 package ensures robust thermal performance and ease of integration into existing circuit designs.
The maximum DC reverse voltage for the TRS12N65D is 650V.
The average rectified current per diode for the TRS12N65D is 6A.
The maximum forward voltage for the TRS12N65D at 6A is 1.7V.
The TRS12N65D has a maximum junction operating temperature of 175°C.
The TRS12N65D uses Schottky technology.
The TRS12N65D is designed for through-hole mounting.