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35,000 pcs
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35000 pcs | On Request | 1 | On Request | On Request | 1132 | On Request | On Request |
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The TRD136DT4 from STMicroelectronics is a high-voltage, fast-switching NPN power transistor. Manufactured using high voltage multi epitaxial planar technology, it offers a high collector-emitter voltage (VCEO) of 400V and a continuous collector current (IC) of 3A, with a peak current capability (ICM) of 6A.
This device is suitable for applications requiring high switching speeds and reliable operation, featuring a low spread of dynamic parameters and minimum lot-to-lot spread. It includes an integrated antiparallel collector-emitter diode.
The transistor is housed in a TO-252 (DPAK) surface-mount package, making it suitable for various electronic ballast and transformer applications. Its maximum power dissipation is rated at 20W at 25°C case temperature, with an operating junction temperature up to 150°C.
Key electrical characteristics include a collector-emitter saturation voltage (VCE(sat)) of up to 1V at 2A collector current and 0.5A base current, and a DC current gain (hFE) of at least 10 at 2A collector current and 5V collector-emitter voltage.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the TRD136DT4 is 400V when the base current (IB) is 0.
The maximum continuous collector current (IC) for the TRD136DT4 is 3A.
The TRD136DT4 is available in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.
The maximum operating junction temperature (TJ) for the TRD136DT4 is 150°C.
The total power dissipation (Ptot) for the TRD136DT4 is 20W at a case temperature of 25°C.
The DC current gain (hFE) is a minimum of 10 at an IC of 2A and VCE of 5V.
The TRD136DT4 is used in electronic ballast for fluorescent lighting and electronic transformers for halogen lamps.