| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type |
The TQP7M9106 from RFMD is a high linearity, high gain 2W driver amplifier designed for demanding RF applications. This InGaP/GaAs HBT amplifier operates across a frequency range of 0.05 to 1.5 GHz, delivering a typical gain of 20.8 dB at 940MHz. It achieves a high output third-order intercept point (OIP3) of +50 dBm and a P1dB of +33 dBm at 940MHz, while consuming a quiescent current of 455 mA.
This amplifier is housed in an industry-standard, RoHS compliant QFN surface mount package, making it suitable for automated assembly processes. The TQP7M9106 incorporates patented on-chip circuit techniques, differentiating it in the market. Its operating temperature range is from -40°C to +85°C.
Key electrical characteristics include its wide frequency range and excellent linearity metrics, making it a robust choice for various RF systems. The surface mount QFN package facilitates integration into compact designs.
The typical gain is 20.8 dB at 940 MHz.
The typical OIP3 is +50 dBm at 940 MHz.
The typical P1dB is +33 dBm at 940 MHz.
It operates from 0.05 GHz to 1.5 GHz.
The typical quiescent current is 455 mA.
The operating temperature range is -40°C to +85°C.
It is available in a QFN package for surface mount mounting.