TPWR8503NL,L1Q The Toshiba TPWR8503NL,L1Q is an N-Channel MOSFET designed for high current applications. It features a 30V drain-to-source voltage and a low on-resistance.
Mfr Part #:

TPWR8503NL,L1Q

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TPWR8503NL,L1Q is an N-Channel MOSFET designed for high current applications. It features a 30V drain-to-source voltage and a low on-resistance.
✓ Total Stock: 25,829 pcs
$ Price Range: $2.56

TPWR8503NL,L1Q Available from 1 distributor

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✓ Non-Authorised
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TPWR8503NL,L1Q Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

TPWR8503NL,L1Q Description

Short technical summary and product information.

The Toshiba TPWR8503NL,L1Q is a single N-Channel MOSFET from Toshiba, part of the MOSFET technology family. It is designed for surface mount applications and comes in an 8-DSOP Advance package.

 

Key electrical specifications include a drain-to-source voltage (Vdss) of 30V and a continuous current rating of 150A (Tc). The on-resistance (Rds On) is a maximum of 0.85mOhm at 50A and 10Vgs. Gate drive characteristics include a maximum gate-to-source voltage of ±20V and a gate threshold voltage (Vgs(th)) of 2.3V at 1mA. Input capacitance (Ciss) is 6900 pF at 15Vds, and gate charge (Qg) is 74 nC at 10Vgs.

 

Thermal specifications include an operating temperature range of 150°C (TJ). Power dissipation is rated at 800mW (Ta) and 142W (Tc). The component is RoHS3 compliant and has an MSL of 1.

 

This MOSFET is suitable for various power switching applications where high current handling and low on-resistance are critical.

TPWR8503NL,L1Q Quick Information

Product Type: MOSFET
Canonical Name: Toshiba TPWR8503NL,L1Q N-Channel MOSFET
Subcategory: N-Channel

TPWR8503NL,L1Q Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TPWR8503NL,L1Q Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

TPWR8503NL,L1Q Features

  • N-Channel MOSFET with 30V drain-to-source voltage.
  • High current capability of 150A (Tc).
  • Low on-resistance of 0.85mOhm maximum.
  • Surface mount 8-DSOP Advance package.
  • RoHS3 compliant with MSL 1.

TPWR8503NL,L1Q Applications

  • Suitable for high-power switching.
  • Ideal for current amplification circuits.
  • Used in power management systems.
  • Applicable in industrial automation.

TPWR8503NL,L1Q FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the TPWR8503NL,L1Q?

The maximum drain-to-source voltage (Vdss) is 30V.

What is the continuous current rating of the TPWR8503NL,L1Q?

The continuous current rating is 150A, measured at the case (Tc).

What is the maximum on-resistance of this MOSFET?

The maximum on-resistance (Rds On) is 0.85mOhm when measured at 50A and 10Vgs.

What is the operating temperature range?

The operating temperature range is up to 150°C (TJ).

What type of package does the TPWR8503NL,L1Q use?

It uses the 8-DSOP Advance package for surface mounting.

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