TPW4R50ANH,L1Q The Toshiba TPW4R50ANH,L1Q is an N-Channel MOSFET designed for power applications. It offers a 100V drain-source voltage and a continuous current rating of 92A.
Mfr Part #:

TPW4R50ANH,L1Q

Available from 2 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TPW4R50ANH,L1Q is an N-Channel MOSFET designed for power applications. It offers a 100V drain-source voltage and a continuous current rating of 92A.
✓ Total Stock: 47,591 pcs
$ Price Range: $2.56

TPW4R50ANH,L1Q Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
47,579 pcs
47579 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
12 pcs
12 pcs On Request 1 On Request On Request 16+ On Request On Request

TPW4R50ANH,L1Q Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

TPW4R50ANH,L1Q Description

Short technical summary and product information.

The Toshiba TPW4R50ANH,L1Q is a high-performance N-Channel MOSFET. It features a maximum drain-source voltage of 100V and a continuous current capability of 92A at case temperature.

 

Key electrical characteristics include a low Rds On of 4.5mOhm at 46A and 10V, a gate charge of 58nC at 10V, and an input capacitance of 5200pF at 50V. The gate threshold voltage is 4V at 1mA, with a maximum gate-source voltage of ±20V.

 

This MOSFET operates at temperatures up to 150°C (TJ). It is housed in an 8-PowerWDFN package and is designed for surface mount applications. The technology used is MOSFET (Metal Oxide).

 

This component is suitable for various power management and switching applications where high current and voltage handling are required.

TPW4R50ANH,L1Q Quick Information

Product Type: MOSFET
Canonical Name: Toshiba TPW4R50ANH,L1Q N-Channel MOSFET
Subcategory: N-Channel

TPW4R50ANH,L1Q Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

TPW4R50ANH,L1Q Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

TPW4R50ANH,L1Q Features

  • N-Channel MOSFET with 100V drain-source voltage.
  • High continuous current rating of 92A.
  • Low Rds On resistance of 4.5mOhm at 46A.
  • Operates at temperatures up to 150°C.
  • Surface mount 8-PowerWDFN package.

TPW4R50ANH,L1Q Applications

  • Suitable for high-power switching circuits.
  • Used in power management applications.
  • Ideal for DC-DC converters.
  • Applicable in motor control systems.

TPW4R50ANH,L1Q FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the TPW4R50ANH,L1Q?

The maximum drain-source voltage (Vdss) is 100V.

What is the continuous current rating of the TPW4R50ANH,L1Q?

The continuous current rating is 92A at case temperature.

What is the Rds On resistance of this MOSFET?

The Rds On resistance is a maximum of 4.5mOhm at 46A drain current and 10V gate-source voltage.

What is the operating temperature range for the TPW4R50ANH,L1Q?

The operating junction temperature (TJ) is up to 150°C.

What package type is the TPW4R50ANH,L1Q supplied in?

It is supplied in an 8-PowerWDFN package for surface mounting.

What is the RoHS status of the TPW4R50ANH,L1Q?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1.

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