| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,793 pcs
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3793 pcs | On Request | 1 | On Request | On Request | 1212+RoHS | On Request | On Request |
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| SVHC Present |
The Toshiba TPS601A is a silicon NPN epitaxial planar photo transistor designed for photo sensor applications. It is housed in a TO-18 metal can package and is suitable for through-hole mounting.
Key electrical characteristics include a maximum collector emitter voltage of 40V and a maximum collector power dissipation of 150mW at 25°C. The operating temperature range is from -40°C to +125°C.
This photo transistor is designed for applications such as photoelectric counters, position detection, and various types of readers where incident light needs to be detected. Its high sensitivity and sharp directivity ensure effective use of incident light.
The maximum Collector Emitter Voltage is 40V.
The maximum power dissipation is 150mW at 25°C.
The operating temperature range is -40°C to +125°C.
The TPS601A is available in a TO-18 metal can package.