| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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22,742 pcs
|
22742 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
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The Texas Instruments TPS2812DRG4 is a dual low-side gate driver designed for high-speed MOSFET applications. This component is capable of delivering a peak output current of 2A, making it suitable for driving highly capacitive loads.
Key electrical specifications include a supply voltage range of 4V to 14V and logic voltages from 1V to 4V. The device features non-inverting input types and synchronous channel configurations. It supports N-channel and P-channel MOSFETs.
Operating within an ambient temperature range of -40°C to 125°C, the TPS2812DRG4 is housed in an 8-SOIC package suitable for surface mounting. Its rise and fall times are rated at 14ns and 15ns respectively, with a maximum propagation delay of 50ns. The maximum power dissipation is 730mW.
This gate driver is designed for applications requiring efficient and fast switching of power MOSFETs. Its robust performance and compact package make it a versatile choice for various power management circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
4V to 14V.
8-SOIC.
-40°C to 125°C.
2A peak.
2 drivers.
N-Channel and P-Channel MOSFETs.
50 ns maximum.