| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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28,595 pcs
|
28595 pcs | On Request | 1 | On Request | On Request | 1920+5 | On Request | On Request | |
|
23,047 pcs
|
23047 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request | |
|
1,077 pcs
|
1077 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Texas Instruments TPS2812DR is a dual high-speed MOSFET driver capable of delivering peak currents of 2 A into highly capacitive loads. This device operates over a supply voltage range of 4V to 14V and features an internal regulator that can extend the range to 40V. It is designed to minimize shoot-through current and consumes low supply current.
The TPS2812DR has a 25-ns maximum rise time and a 40-ns maximum propagation delay when driving a 1-nF load at VCC = 14 V. The operating ambient temperature range is -40°C to 125°C. This component is available in an 8-SOIC package, suitable for surface mount applications.
Key electrical characteristics include a 2A peak output current and a low supply current of 5 µA when the input is high or low. The input type is non-inverting, and it supports N-channel and P-channel MOSFETs. The device is configured as a low-side driver with synchronous channel type.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.97 | $0.97 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The TPS2812DR provides a peak output current of 2A.
The TPS2812DR operates with a supply voltage range of 4V to 14V.
The TPS2812DR operates in an ambient temperature range of -40°C to 125°C.
The TPS2812DR is available in an 8-SOIC package.
The rise time for the TPS2812DR is a maximum of 25ns under specific test conditions.
The propagation delay for the TPS2812DR is a maximum of 40ns under specific test conditions.