TPS23755RJJR The Texas Instruments TPS23755RJJR is an IEEE 802.3at PoE PD with a no-opto flyback DC-DC controller. It supports up to 13W PD power level and operates within a wide temperature range.
Mfr Part #:

TPS23755RJJR

Available from 3 distributors
Mfr Name: Texas Instruments
Texas Instruments
The Texas Instruments TPS23755RJJR is an IEEE 802.3at PoE PD with a no-opto flyback DC-DC controller. It supports up to 13W PD power level and operates within a wide temperature range.
✓ Total Stock: 24,000 pcs
$ Price Range: $1.10

TPS23755RJJR Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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12,000 pcs
12000 pcs On Request 1 On Request On Request 21+ On Request On Request
Non-Authorised Inventory information
11,000 pcs
11000 pcs On Request 1 On Request On Request 24+ On Request On Request
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1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

TPS23755RJJR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Auxiliary Sense
Current
Internal Switch(s)
Mounting Type
Number of Channels
Operating Temperature
Operating Temperature Range
Standards
Supplier Device Package
Type
Voltage

TPS23755RJJR Description

Short technical summary and product information.

The Texas Instruments TPS23755RJJR is an active component designed for Power over Ethernet (PoE) applications. It functions as an IEEE 802.3at Power Device (PD) and incorporates a no-opto flyback DC-DC controller. This device supports Type 1 (802.3af) PoE standards and can handle a PD power level of 13W.

 

Key electrical specifications include a maximum input voltage of 57V and a minimum input voltage of 10.2V. The PoE current limit is 405mA (min), and the inrush limit is typically 0.14A. It features integrated switching FETs with a low rDS(on) of 360mΩ (typ) and a robust 100V, 0.36Ω hotswap MOSFET. The controller also includes a 150V, 0.77Ω power MOSFET for the PWM controller.

 

Designed for flexibility, the TPS23755RJJR offers primary-side regulation, secondary-side adapter priority, and spread-spectrum frequency dithering for enhanced EMI reduction. It supports CCM operation and features advanced startup capabilities. The operating temperature range is -40°C to 125°C (TJ), making it suitable for various environmental conditions.

 

This component is supplied in a compact 24-VSON (6mm x 4mm) package with a surface mount type. It is ideal for designs requiring a complete IEEE 802.3at PD solution for type 1 PoE, offering Ethernet Alliance (EA) logo certified designs.

TPS23755RJJR Quick Information

Product Type: PoE Controller
Series: TPS23755
Canonical Name: TPS23755 IEEE 802.3at PoE PD with No-Opto Flyback DC-DC Controller
Subcategory: Power Management ICs

TPS23755RJJR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TPS23755RJJR Estimated Pricing

Qty Low High
1+ $1.10 $1.10

Estimated market price range - modelled values for guidance only, not live distributor offers.

TPS23755RJJR Features

  • IEEE 802.3at PoE PD controller
  • No-opto flyback DC-DC controller
  • Supports 13W PD power level
  • Wide operating temperature range
  • Compact 24-VSON package

TPS23755RJJR Applications

  • Power over Ethernet systems
  • PoE powered devices
  • Network equipment power
  • Industrial automation
  • Telecommunications devices

TPS23755RJJR FAQs

7 frequently asked questions generated from this part’s specifications.
What PoE standard does the TPS23755RJJR support?

It supports 802.3at Type 1 (802.3af).

What is the maximum input voltage of the TPS23755RJJR?

57V.

What is the PD power level of the TPS23755RJJR?

13W.

What is the operating temperature range of the TPS23755RJJR?

-40°C to 125°C.

What package is the TPS23755RJJR available in?

24-VFDFN Exposed Pad, 23 Leads (supplier package 24-VSON 6x4).

Does the TPS23755RJJR have an internal switch?

No, it does not have internal switches.

What is the typical rDS(on) of the hotswap MOSFET?

0.36Ω typical.

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