| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
301,000 pcs
|
301000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
28,578 pcs
|
28578 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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| Tape & Reel |
The TPS1120DRG4 from Texas Instruments is a P-Channel MOSFET suitable for power distribution and load driving applications. It features a drain-to-source voltage rating of 15V and a continuous drain current capability of 1.17A.
This component operates within a temperature range of -40°C to 125°C, with a maximum power dissipation of 0.84W. It is housed in a SOIC-8 package and utilizes surface mount technology for integration into electronic circuits.
The MOSFET has a fast fall time of 2ns and a rise time of 10ns. It is manufactured using silicon material and is RoHS compliant. The device is also lead-free.
Key electrical characteristics include a P-Channel polarity and 2 channels. The TPS1120DRG4 is designed for reliable performance in various power management scenarios.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.32 | $0.32 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The TPS1120DRG4 has P-Channel polarity.
The maximum drain to source voltage (Vds) for the TPS1120DRG4 is 15 V.
The continuous drain current (Ids) of the TPS1120DRG4 is 1.17 A.
The rise time of the TPS1120DRG4 is 10 ns.
The fall time of the TPS1120DRG4 is 2 ns.
The TPS1120DRG4 operates within a temperature range of -40℃ to 125℃.
The TPS1120DRG4 has 2 channels.
The maximum power dissipation of the TPS1120DRG4 is 0.84 W.
The TPS1120DRG4 is available in an SOIC-8 package.
The TPS1120DRG4 uses Surface Mount technology.