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TPS1120DR The Texas Instruments TPS1120DR is a dual P-channel enhancement-mode MOSFET designed for 3-V or 5-V power distribution in battery-powered systems. It features a 15V drain-to-source voltage and a low on-resistance.
Mfr Part #:

TPS1120DR

Available from 2 distributors
Mfr Name: Texas Instruments
Texas Instruments
The Texas Instruments TPS1120DR is a dual P-channel enhancement-mode MOSFET designed for 3-V or 5-V power distribution in battery-powered systems. It features a 15V drain-to-source voltage and a low on-resistance.
✓ Total Stock: 32,821 pcs
$ Price Range: $1.02

TPS1120DR Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Romaks Technologies ✓
Non-Authorised Inventory information
30,133 pcs
On Request
30133 pcs On Request 1 On Request On Request On Request On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
2,688 pcs
On Request
2688 pcs On Request 1 On Request On Request 18+ On Request On Request
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TPS1120DR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
ESD Protection
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
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TPS1120DR Description

Short technical summary and product information.

The TPS1120DR from Texas Instruments is a dual P-channel enhancement-mode MOSFET optimized for 3-V or 5-V power distribution in battery-powered applications. It is built using the Texas Instruments LinBiCMOS process.

 

Key electrical specifications include a drain-to-source voltage (VDS) of 15V and a continuous drain current of 1.17A. The Rds On (Max) is 180mOhm at 1.5A and 10V, with a gate charge (Qg) of 5.45nC at 10V. The gate threshold voltage (VGS(th)) is a maximum of 1.5V at 250µA, and it features a logic-level gate.

 

This MOSFET is housed in an 8-SOIC package with surface mount technology. It operates within a junction temperature range of -40°C to 150°C. The device includes built-in circuitry for 2-kV ESD protection per MIL-STD-883C, Method 3015, making it suitable for portable equipment potentially subject to electrostatic discharge.

 

Applications for the TPS1120DR include notebook computers, personal digital assistants (PDAs), cellular telephones, bar-code scanners, and PCMCIA cards. The TPS1120D variant offers a pinout common with other p-channel MOSFETs in small-outline integrated circuit SOIC packages.

TPS1120DR Quick Information

Product Type: MOSFET
Canonical Name: TPS1120DR Dual P-channel Enhancement-Mode MOSFET
Subcategory: P-Channel MOSFET

TPS1120DR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TPS1120DR Estimated Pricing

Qty Low High
1+ $1.02 $1.02

Estimated market price range - modelled values for guidance only, not live distributor offers.

TPS1120DR Features

  • Dual P-channel enhancement-mode MOSFET.
  • 15V drain-to-source voltage rating.
  • 1.17A continuous drain current.
  • 180mOhm Rds(on) at 1.5A, 10V.
  • 8-SOIC surface mount package.

TPS1120DR Applications

  • Ideal for 3-V or 5-V power distribution.
  • Optimized for battery-powered systems.
  • Suitable for portable electronic devices.
  • Used in notebook computers and PDAs.
  • Designed for low-voltage battery management.

TPS1120DR FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage (VDS) for the TPS1120DR?

The drain-to-source voltage (VDS) for the TPS1120DR is 15V.

What is the continuous drain current of the TPS1120DR?

The continuous drain current for the TPS1120DR is 1.17A.

What is the maximum on-resistance (Rds On) for the TPS1120DR?

The maximum on-resistance (Rds On) for the TPS1120DR is 180mOhm at 1.5A and 10V.

What is the operating temperature range of the TPS1120DR?

The operating temperature range for the TPS1120DR is -40°C to 150°C (TJ).

What package type is the TPS1120DR available in?

The TPS1120DR is available in an 8-SOIC package.

What is the RoHS status of the TPS1120DR?

The TPS1120DR is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the TPS1120DR?

The Moisture Sensitivity Level (MSL) for the TPS1120DR is 1 Unlimited.

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